| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry-etching device able to markedly reduce the surface roughness of a surface processed by dry-etching. SOLUTION: A parallel flat plate type dry-etching devices B, C, D, E are equipped with a substrate electrode 2 for supporting substrates 1 to be etched, an opposed electrode 10 opposing to the substrate electrode 2, a chamber 6 for housing the electrodes 2, 10, a high frequency electric source 8 for supplying a high frequency electric power to generate plasma between the electrodes 2, 10, valves 3, 4, 5 for evacuating the inside of the chamber 6 in order to make the inside high vacuum state and an etching gas introducing port 9 for introducing the etching gas into the chamber 6. In this case, heaters B1, C1 for heating the members 1 in order to maintain the temp. of the members 1 at a desired temp. during dry-etching and heat exchangers D1, E1 are installed.
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