| 摘要 |
PROBLEM TO BE SOLVED: To obtain a plasma system having a capacitance compensator for keeping the total capacitance, between a chuck being set with a wafer and a ground terminal, at a constant value at all times, and a plasma system in which process variables can be kept at constant values at all times. SOLUTION: The plasma system for use in fabrication of semiconductor element comprises a grounded chamber CB providing a space for carrying out a specified process, a chuck CK fixed in the chamber CB while being insulated therefrom, a gas injection ring R disposed on the periphery of the sidewall of the chuck CK while being coupled electrically with the chamber CB, an induction plasma power supply PS2 connected with the chuck CK, a system controller SC delivering a control signal for the induction plasma power supply PS2, and a capacitance compensator CC for keeping the total capacitance between the chuck CK and the ground terminal at a constant value. According to the arrangement, uniformity of plasma process can be enhanced.
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