| 摘要 |
PROBLEM TO BE SOLVED: To manufacture an excellent ohmic electrode by a method wherein, after specified constituent elements out of semiconductors are supplied to an interface region on an electrode film side of the semiconductor, heat treatment is applied thereto. SOLUTION: An Ni film 2 is formed on a surface of an n type 4H-SiC substrate 1 under the condition of a vacuum degree at the time of forming a film is 1×10-7 Torr or less. Following that, a vicinity of an interface region 3 between the Ni film 2 and the SiC substrate 1 is implanted by Si ions, and the interface region 3 out of the substrate 1 is formed as an amorphous region where Si is excessive. Thereafter, in the inert gas atmosphere, treatment is made at 800 deg.C for 10 min, to subject Ni and Si to alloying to form Ni silicide, and to obtain an ohmic electrode 4. Thus, as a temperature of heat treatment is lowered while ohmic characteristics can be obtained, it is possible to manufacture an excellent ohmic electrode 4.
|
