| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a threshold voltage control device of a non-volatile memory cell that can accurately control the threshold voltage of a memory cell being controlled by a word line voltage, reduces control time, and can be operated with a low power, and its method. SOLUTION: A word line voltage from a word line voltage generation part 30 is applied to a specific memory cell of a memory cell array 10 by a word line drive part 40, level data LD corresponding to each threshold voltage level is selectively outputted by a level data selection part 50 and is latched by a latch part 60, data CD corresponding to a comparison result RS between the voltage of a bit line current ICELL from a comparison part 80 and the above reference voltage PROB from a reference voltage generation part 20 is outputted, and a bit line voltage being selected according to the data CD using a reference bit line voltage VBLREF by a bit line voltage control part 70 is applied to a prescribed memory cell by a bit line selection part 90.</p> |
