发明名称 SEMICONDUCTOR ELEMENT AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To obtain a semiconductor element which can be manufactured comparatively easily and has good element performance. SOLUTION: Regions 12a, 16a are formed like thin lines at a p-type semiconductor 12 and an n-type semiconductor 16. The regions 12a, 16a have improved conductivity by irradiating the particle beam or electromagnetic beam and function as a quantum thin line. Consequently, this improves the performance of the element. The crystallinity or the impurity activation ratio of the regions 12a, 16a may be given gradient. In particular, it is suited to a thermoelectric element.
申请公布号 JP2000101151(A) 申请公布日期 2000.04.07
申请号 JP19980269450 申请日期 1998.09.24
申请人 SANYO ELECTRIC CO LTD 发明人 NAKAHARA YASUO
分类号 H01L21/20;H01L21/265;H01L21/268;H01L35/14;H01L35/16;H01L35/26;H01L35/34;(IPC1-7):H01L35/26 主分类号 H01L21/20
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