发明名称 MICROCHIP NEGATIVE ELECTRODE WITH LESS GAS EMISSION
摘要 PROBLEM TO BE SOLVED: To minimize desorption of contaminants due to a layer insulating a negative electrode from a grid by incorporating a negative-electrode conductor between a substrate and a grid insulating layer, and forming a layer with a small bonding factor, at least between grid wires. SOLUTION: An insulating layer 4 made of silicon oxide is attached on a negative-electrode conductor, and conductive grids 5 formed of conducting wires 13 perpendicular to rows 3 of a negative electrode 11 are formed on the insulating layer 4. Microchips 10 are built in holes 14 formed, at least in the wires 13 and in the insulating layer 4, and gas emission preventing layers 20 are each provided between the grid wires 13. The gas emission preventing layer 20 masks, as wide as possible, surfaces of materials in the negative electrode/grids heavily emitting gases by impacts of electrons, and as the material used for this layer, an insulating material such as aluminum (Al2O3) is selected, so as to have not only a small bonding factor but also to maintain insulation between neighboring grid wires 13.
申请公布号 JP2000100357(A) 申请公布日期 2000.04.07
申请号 JP19990260068 申请日期 1999.09.14
申请人 PIXTECH SA 发明人 MOUGIN STEPHANE
分类号 H01J31/12;G09F9/30;H01J3/02;(IPC1-7):H01J31/12 主分类号 H01J31/12
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