FORMATION OF TRENCH ISOLATION

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of modified trench isolation capable of releasing the electric field at corner part. SOLUTION: Spacers 5 are formed on the sidewall of the aperture of a nitride film mask 3. Next, the surface of a semiconductor substrate 1 is etched away using this nitride film mask 3 thereby forming a trench 6 reflecting the shape of the spacers 5 on the surface of the semiconductor substrate 1. Finally, an oxide film is buried in the trench 6.