| 摘要 |
PROBLEM TO BE SOLVED: To reduce the area of an integrated circuit as a whole by forming a magnetic device in flat shape and high in performance on a semiconductor integrated circuit by forming an insulating film on a protective film making its top surface flat. SOLUTION: A silicon nitride protective layer 3 is deposited on the top surface of a semiconductor integrated circuit 2. Then, an insulation film 4 of the thermosetting resin such as polyimide is formed on the rugged upper side of the protective layer 3. When an insulating film 4 is formed, first a thermosetting resin is deposited as high as a level 31. Then, a film-like core 53 of magnetic material is formed, and then thermosetting resin is laminated as high as a level 42 above the top surface of the first core 53 by a prescribed distance. Then, a vertical hole is bored in the insulating film 4 and the protective layer 3, so as to form an interlayer wiring 52 that connects a coil 51 and an electrode to a wiring 22. Then, the coil 51 and the interlayer wiring 52 are formed, and thermosetting resin is piled as high as a level 43 for the formation of the insulation film 4.
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