| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure suited for flattening a wiring layer, using a spin coated film and provide its manufacturing method. SOLUTION: An insulating film is formed on a surface of a silicon substrate included in a semiconductor device, and a plurality of wirings 3 are formed at specified intervals on the insulating film. A plurality of pseudo-wirings 4, at least one of which having at least a bending part (K), are formed on the insulating film in a wide region (R) which is not covered wiring 3. In this case the pseudo-wirings 4 are formed, at the same time as the formation of the wirings 3, using the same material as the wiring 3. In addition, the pseudo- wirings 4 are formed in an irregular pattern, so that a groove 9 between the pseudo-wirings 4 will go though in one direction.
|
