| 摘要 |
PROBLEM TO BE SOLVED: To obtain a vacuum treating device, which aims at stabilizing the state of plasma discharge and can perform uniform etching treatment on a substrate. SOLUTION: This device is a vacuum treating device, wherein a gas is fed within a reaction chamber 1 and a high-frequency voltage is applied to an upper electrode 11 and a lower electrode 12 for treating a substrate 17 to be treated. In this case, horizontal projecting parts 27 which form bottleneck parts 28 between the projection parts 27 and a substrate pressing ring, in facing opposite to the end surfaces 26 of the substrate pressing ring in a state such that the ring presses the substrate to be treated are provided on the wall surface of the chamber 1.
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