| 摘要 |
PROBLEM TO BE SOLVED: To suppress fine Si crystal nuclei particles from growing by using a main gas for depositing a polysilicon on a semiconductor substrate and an additive gas for blocking the nucleus forming of Si in a CVD reactor chamber gas phase, which results in the decrease of the particles. SOLUTION: A silane feeder 51 and an HCl feeder 52 supply a main gas silane and additive gas HCl separately at once into a CVD reactor chamber by separate routes, the silane gas and HCl gas are mixed in a reactor chamber 53 inlet and are chemically reacted to deposit a polysilicon film on a semiconductor substrate, wherein the HCl gas is added at a deposit flow rate ratio of 0.08 to the silane gas 1 to reduce the number of particles to 20 or less. Thus the particles of fine Si crystal nuclei can be suppressed from growing.
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