| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate which can become such an SOI that is suitably used for the manufacture of a high-frequency transistor. SOLUTION: In a method for manufacturing semiconductor substrate in which a first substrate 1 containing a semiconductor layer area 12 is stuck to a second substrate 3, and the first substrate 1 is removed by leaving the semiconductor layer area 12 on the second substrate 3, the magnitudinous relation between the concentration of a P-type impurity and that of an N-type impurity in the sticking atmosphere is selected in accordance with the construction of the second substrate 3.
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