| 摘要 |
PROBLEM TO BE SOLVED: To enable a device to be turned into three-dimensional in structure and enhanced in both density and degree of integration by a method, wherein an additional device is formed on the side of a device chip by the use of a semiconductor film process technique. SOLUTION: Devices 3 are each formed on a surface 4 and a side face 5 of an Si chip 2 and connected together with a wiring pattern 6 in a manner of three-dimensional wiring. The sides of the chip 2 number 6 (6 sides if excluding a reference side for reference sides) for maximum (since it is a hexahedron), provided that sides are 4 in number, then one of the sides is not available for use, LSIs can be each formed on all the six sides, but the number of the sides where LSIs are formed can be arbitrarily selected as need. Therefore, the components of a three-dimensional device are formed through a semiconductor process technique, so that the three-dimensional device can be easily constructed and made compact in structure.
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