| 摘要 |
PROBLEM TO BE SOLVED: To provide a photolithography method which increases the depth of focus(DOF) of an isolated line pattern on a substrate using a vapor-phase pretreatment before a photo-resist is developed. SOLUTION: Using a spin-on technology, a photoresist layer 300 is coated on a substrate. Then, an exposure process is performed on the photoresist layer 300 through a reticule 400 so that the pattern of the reticule 400 is transferred to the photoresist layer 300. Further, before or after the exposure process, a vapor-phase pretreatment is performed with the photoresist layer 300 to harden the surface of the photoresist layer 300. Lastly, a development process is performed to form a pattern on a substrate 1. |
