发明名称 PRODUCTION OF MASK
摘要 <p>PROBLEM TO BE SOLVED: To decrease the charge amt., to avoid charging and discharging due to contact or the like, and to obtain a mask with decreased dielectric breakdown by removing chromium on the peripheral part of a mask which is preliminarily covered with chromium to the peripheral part of a glass substrate so as to leave chromium only in the necessary light-shielding zone. SOLUTION: The photomask has a structure in which chromium is removed except for a required light-shielding zone. Namely, by forming a glass part 4 where unnecessary chromium is removed, the amt. of charges accumulated in the chromium in the light-shielding zone 1 can be decreased as well as charging and discharging due to contact or handling can be avoided. Thereby, dielectric breakdown between the chromium in the light-shielding zone 1 and the product pattern 2 can be decreased. By removing chromium in the peripheral part while leaving chromium only in the necessary light-shielding zone 1 as above described, charges accumulated in the chromium in the light-shielding zone can be decreased and charging and discharging due to contact can be prevented. Thereby, dielectric breakdown of chromium can be decreased.</p>
申请公布号 JP2000098592(A) 申请公布日期 2000.04.07
申请号 JP19980272115 申请日期 1998.09.25
申请人 SEIKO EPSON CORP 发明人 MURAMOTO YOSHIYUKI
分类号 H01L21/027;G03F1/40;G03F1/60;(IPC1-7):G03F1/14 主分类号 H01L21/027
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