| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and device for heat treatment wherein the temperature distribution in the space above a substrate is made constant during heat treatment. SOLUTION: Related to a heat treatment method wherein a wafer W is placed on a mount stage 33 provided in a treatment vessel 30 and the wafer W is heated at 120 deg.C by a heating element 34 buried inside the mount stage 33, and a gas 41 pre-heated to 120 deg.C by a heater 42 is straightened to parallel to the wafer W by a straightening vane 44 provided near a supply port 43, for stream in a space 37 above the wafer W.
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