| 摘要 |
PROBLEM TO BE SOLVED: To provide a fabrication method of semiconductor device, especially a method for producing a high permittivity substance using a suboxidation layer. SOLUTION: The inventive method comprises a step 104 of forming a layer of suboxide substance composed of SiOx (x is larger than 0 but smaller than 2) on a substrate, and a step 106 of forming a structure on the layer of suboxide substance. The suboxide substance is formed by exposing a semiconductor substrate to an electron beam evaporator source employing a silicon source and a semiconductor wafer is set in an atmosphere containing oxygen having a partial pressure during the step. Partial pressure of oxygen is set in the range of 10-7 to 10-4 Torr. The semiconductor substrate is preferably kept at a temperature of 650 to 750 deg.C, more preferably at 670 to 720 deg.C, and most preferably at 670 to 720 deg.C. Furthermore, the suboxide is formed by chemical vapor deposition(CVD) in an atmosphere containing oxygen.
|
