| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device with a bipolar transistor, in which the bipolar transistor with good AC characteristics and stable and high DC current amplifying rate can be obtained easily. SOLUTION: A base diffusion layer 6 and a high-density base diffused layer 7 are formed on the face of a semiconductor substrate 1, and an insulating film 8 is grown on the surface thereof. An emitter forming contact hole 9 is formed in the insulating film 8, on a base diffused layer 6. The semiconductor device is dipped in a solution, containing hydrofluoric acid, to completely remove a natural oxide film on a surface of the base diffused layer 6. The solution containing the hydrofluoric acid is displaced by pure water, so that a stable bonding of silicon-hydrogen is formed on the surface of the base diffused layer 6, and the growth of a natural oxide film is prevented since then. The semiconductor device is dipped in a solution, containing hydrogen peroxide so that a silicon oxide film 16 with a uniform thickness of less than 10Åis formed on the surface of the base diffusion layer 6.
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