| 摘要 |
PROBLEM TO BE SOLVED: To obtain a positive type resist composition suitable for exposure with ArF excimer laser light by incorporating a resin which has specified repeating structural units and is decomposed by the action of an acid to increase its solubility in an alkali developer. SOLUTION: The resist composition contains a compound which generates an acid when irradiated with active light or radiation and a resin which has repeating structural units of formulae I and II and is decomposed by the action of the acid to increase its solubility in an alkali developer. In the formulae I and II, R1, R3, R13 and R15 are each H, halogen or the like, R2 and R14 are each H, cyano or the like, X1 and X4 are each a single bond, divalent alkylene, divalent alkenylene or the like, R16 and R17 are each H, alkyl or the like, X is divalent alkylene, divalent alkenylene or the like and Y is a polycyclic cycloaliphatic group. When a source of light of <=220 nm wavelength for exposure is used, the resist composition has good sensitivity and resolution and ensures satisfactory dry etching resistance. |
