| 摘要 |
PROBLEM TO BE SOLVED: To let the charge on a photo resist move to an active region and prevent the breakage or deterioration caused by the charge of a gate film, by providing a semiconductor device with an active region for letting the charge to move in process stage in the vicinity of an active element region. SOLUTION: An NWELL region 1 and a PWELL region 2 are made. Then, a LOCOS region is made, and element isolation is performed, whereby active regions 3 and 4 for forming the diffused layer regions of source/drain and an active region 5 for letting the charge at ion implantation for formation of diffused layer of source/drain go are made. Then, when introducing the impurities of source/drain by ion implantation, the photo resist rend in the active element region crosses the active region 5, so the charge riding on the photoresist can be let move to the active region 5. Accordingly, the breakage pr deterioration caused by the charge of a gate film can be prevented, and the reliability on the gate film of the semiconductor device rises.
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