| 摘要 |
PROBLEM TO BE SOLVED: To manufacture an epitaxial wafer having a low haze level by lowering the growth temp. in the epitaxial growth of an Si layer on the surface of an Si wafer in specific conditions by a specific temp. range from the normal growth temp. SOLUTION: An Si wafer having a crystal orientation <100> and an inclination angle of 0 deg.±1 deg. is carried into a reactor chamber (S1). Then the reactor chamber is held at a specified anneal temp. for a fixed time to anneal (S2), and then a silane type gas such as trichlorosilane, dichlorosilane or silane trichloride, etc., is poured into the reactor chamber, so that the silane type gas and H gas have specified partial pressures to make the epitaxial growth at a growth temp. held lower (S3) by about 50-100 deg.C than the normal growth temp. After these have ended, the reactor chamber temp. is lowered, and the epitaxial wafer having epitaxially grown is carried out (S4).
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