发明名称 SPIN VALVE FILM, MAGNETO-RESISTIVE ELEMENT AND MAGNETO- RESISTIVE MAGNETIC HEAD
摘要 PROBLEM TO BE SOLVED: To permit the embodiment of high output without reducing component film thicknesses by providing free layers with at least laminated films formed by laminating a Ta layer and an NiFeTa film. SOLUTION: When an external magnetic field is applied to an SV type MR element 10, the magnetization direction of the free layers is determined in correspondence to the intensity of the external magnetic field and a first soft magnetic layer 21 is constituted by laminating the Ta film 26, the NiFeTa film 27 and a CoFe film 28. Cu, etc., are used for the material of a nonmagnetic layer 22 and CoFe, etc., are used for a second soft magnetic layer 23. Mn-base irregular alloys, such as IrMn, Mn-base regular alloys or oxides, such as NiO andα-Fe2O3, are used for the material of an antiferromagnetic layer 24. Ta is added to the NiFe film laminated on the Ta film 26 constituting the first soft magnetic layer to form the NiFeTa film 27. The thermal stability of the SV type MR element 10 is improved by increasing the output before the heat treatment of the SV type MR element 10 and regulating the content of the Ta of the NiFeTa film 27.
申请公布号 JP2000099925(A) 申请公布日期 2000.04.07
申请号 JP19980266989 申请日期 1998.09.21
申请人 SONY CORP 发明人 MIZUGUCHI TETSUYA
分类号 B32B15/01;G11B5/39;H01F10/32;(IPC1-7):G11B5/39 主分类号 B32B15/01
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