发明名称 SEMICONDUCTOR OPTICAL ELEMENT
摘要 PROBLEM TO BE SOLVED: To reduce absorption of light due to the clad layer of a spot size conversion part, improve slope efficiency, reduce operation current, and to reduce threshold current. SOLUTION: An element is constituted by integrating an active region (laser part) 30, with a laser oscillation or light amplification function due to the injection of current and a spot size conversion part 2, where no current is injected. In this case, the carrier concentration of a p-type clad layer 8 of a spot-size conversion part 3 is set lower than the carrier concentration of the p-type clad layer (high-concentration Zn-doped region) 8a of the active region 30, thus reducing the absorption of light due to a clad layer at a spot size conversion part 31.
申请公布号 JP2000101186(A) 申请公布日期 2000.04.07
申请号 JP19980271020 申请日期 1998.09.25
申请人 NEC CORP 发明人 OKUNUKI YUICHIRO
分类号 H01S5/026;H01S5/00;H01S5/227;H01S5/343;(IPC1-7):H01S5/227 主分类号 H01S5/026
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