发明名称 HEAT TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To obtain a heat treatment apparatus which can maintain an in-plane uniformity of a substrate temperature at heat treatment. SOLUTION: This apparatus includes a first gas inlet port 80 provided at a position facing an opening 11 of a chamber 10, and a second gas inlet port 90 for introducing a gas into the chamber 10 through a plurality of gas blow-out ports 91 made in a plate provided nearly parallel to the plane of a substrate W within the chamber 10. By providing a gas exhaust port 70 in a furnace block 50, when a gas is introduced from the first gas inlet port 80 during carry-in and out of the substrate W, outside air can be efficiently prevented from being included into the chamber 10, even if the furnace port is opened. At heat treatment, by introducing a gas into the chamber 10 from the second gas inlet port 90, a gas flow which is nearly vertical to the substrate plane is established, thus enabling maintenance of an in-plane uniformity of a substrate temperature.
申请公布号 JP2000100742(A) 申请公布日期 2000.04.07
申请号 JP19980271197 申请日期 1998.09.25
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 HASHIZUME AKIO;TAKAHASHI MITSUKAZU
分类号 H01L21/26;(IPC1-7):H01L21/26 主分类号 H01L21/26
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