发明名称 CAPACITOR ARRANGED ON CARRIER IN SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To enable a capacitor provided with a high ε dielectric body or ferroelectric body to be further reduced in required space by a method, wherein plates provided at a certain interval are arranged nearly in parallel with the surface of a carrier and mechanically and electrically connected together through the intermediary of a support structure. SOLUTION: A second material layer is removed through an etching process, where an isotropic component is used, and a first material layer, a support structure 7, and the surface 2 of a carrier are not etched. A first electrode comprises plates 61 arranged at a certain interval and a support structure 7, where the support structure 7 mechanically and electrically connects the plates 61 together to the surface of a carrier. The first electrode is brought into contact with terminals 3 and 4 through the intermediary of a lowermost capacitor plate. At this point, capacitor dielectric bodies 9 formed of high ε dielectric material or ferroelectric material are laminated through a normal method. A structure located below is protected against oxidation in a high-temperature process, because oxygen is stopped from diffusing through a barrier 4. A conductive layer is deposited for the formation of a counter electrode 10.
申请公布号 JP2000101046(A) 申请公布日期 2000.04.07
申请号 JP19990260497 申请日期 1999.09.14
申请人 SIEMENS AG 发明人 SCHLOESSER TILL;LANGE GERRIT DR;FRANOSCH MARTIN;WENDT HERMANN DR
分类号 H01L27/04;H01L21/822;H01L21/8242;H01L27/105;H01L27/108 主分类号 H01L27/04
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