| 摘要 |
PROBLEM TO BE SOLVED: To enable a gate oxide/semiconductor to be reduced in interface state density and kept low in state density by a method, wherein an oxide dielectric material layer is deposited on the primary surface of a GaAs semiconductor. SOLUTION: Elements are selected to be implanted for the formation of a P-MOSFET 180 and an N-MOSFET 188. An N-type region 183 is formed by implanting Si or S ions by a dielectric layer 182 in a region of a wafer which is demarcated by the use of a photoresist. After the photoresist is removed, a new mask used for implantation to a channel contact is prepared, and an N+-channel contact is formed. A P+ source 195 and a P+ drain 186 are formed, and a source 187 and a drain region 189 are formed. With this setup, a gate oxide/GaAs semiconductor is lowered in the interface state density and can be kept low in state density through a subsequent process.
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