| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for marking semiconductor wafer by which the number of manufacturing processes of a semiconductor wafer can be reduced and, at the same time, the manufacturing yield of the wafer can be increased while the method uses a hard marking method by which an inexpensive capital investment and an inexpensive manufacturing cost can be realized. SOLUTION: A mark 3 is formed in the marking area MA of a semiconductor wafer 1 by a hard marking method in which a marking substance is physically scattered and removed by projecting a laser beam 15 upon the substance. At the time of forming the mark 3, an non-oxidizable mask 12 used for forming a field oxide film in an element separating area FA is also used as a protective film 12 for marking to protect an element area TA from the scattered substance.</p> |
