| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with titanium silicide film, and fabrication method thereof, in which generation of thin wire effect is suppressed even when the gate length or the wiring width is reduced. SOLUTION: The method for fabricating a semiconductor device with titanium silicide film comprises a step for forming a metal film 11 on a gate electrode 14 and an impurity layer 18 by sputtering titanium, a step for forming a protective film 15 on the metal film 15 by sputtering cobalt, and a step for forming a titanium silicide film 13 by heat treating the protective film 15, the titanium metal film 11, the gate electrode 14 and the impurity layer 18 to cause silicidizing reaction among them. According to the method, generation of thin wire is suppressed.
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