| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor element which can prevent growth of a natural oxide film and generation of contamination particles, when a large number of unit processes are performed sequentially. SOLUTION: This manufacturing method for a semiconductor element, which manufactures a semiconductor element in semiconductor process treating equipment having at least one reaction vessel module, is provided with a step for forming a first conducting layer on a semiconductor substrate, a step for forming a lower electrode 230 by patterning and for etching the first conducting layer, a step for forming a dielectric film 240 for a capacitor on the lower electrode 230 by applying a chemical vapor deposition process in the reaction vessel in the treating equipment, and a step for forming an upper electrode 250 on the dielectric film 240 for a capacitor. A part or the whole of the respective steps can be performed consistently.
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