| 摘要 |
PROBLEM TO BE SOLVED: To improve a P-type contact layer to contrive a low-operating voltage ohmic contact of the P-type contact layer with a layer consisting of a II-V compound layer, by a method wherein the layer consisting of the II-V compound layer is provided between a P-type III-V compound semiconductor layer and a P side electrode. SOLUTION: A semiconductor laser 100 is formed so that a laminated structure 120 consisting of a GaN compound semiconductor material is turned into an N-type layer on the side of a sapphire substrate 110 on the sapphire substrate 110. An MgN contact layer 130 consisting of a compound of magnesium with nitrogen is formed on the surface of the P-type layer of this structure part 120. The structure 120 is formed on the substrate 110 and the layer 130, a P side electrode 140 and an N side electrode 150 are formed over the substrate 110. This layer 130 is undoped, but as a nitrogen vapor pressure in the layer 130 is high in this state of the layer 130, the nitrogen vapor pressure is prevented from being bled from an MgN compound by an addition of hydrogen to the layer 130. Moreover, for improving the characteristics of the laser 100, carbon to act as in acceptor in a II-V compound semiconductor layer is added to the layer 130 and the resistance of the contact layer can be reduced. |
