| 摘要 |
PROBLEM TO BE SOLVED: To make a GaN substrate which optimizes the lamination of an active layer on the GaN substrate and allow the manufacturing process to be lessened. SOLUTION: This method of manufacturing a semiconductor light emitting element comprises the steps of forming an InGaN active layer 2 contacted directly to the surface of a GaN substrate 1, forming a p-type compd. semiconductor layer laminated on the surface of the active layer 2, and forming a p-side electrode on the surface thereof. Before growing the active layer 2, the surface of the substrate 1 is heat treated in an atmosphere gas, contg. at least ammonia gas or both N gas and H gas added thereto, thereby enhancing the crystallinity of the substrate 1 surface. |
