| 摘要 |
PROBLEM TO BE SOLVED: To prevent harmful impurities from being mixed during a halogen compound processing and to realize uniform processing even in a large area, by heating a substrate to which solution is applied in a specified temperature range in an inert gas atmosphere which contains oxygen and then cleaning it. SOLUTION: A substrate for heat treatment 4, where the mist of halogen compound solution, is sprayed is moved to a heating part provided with a tunnel-like muffle 13 and a heater 12 by a transportation roller 8. The substrate is heated, while being transferred by a mesh belt-type transfer mechanism 16 in the muffle 3 of an inert atmosphere, where temperature and oxygen concentration are controlled. A heating process is executed normally in the atmosphere of 350-500 deg.C, where oxygen around 10,000 ppm is contained in an inert gas such as nitrogen. The substrate for heat treatment 4 after heating is transferred to a cleaning part 20 by the transfer roller 8 and is cleaned by ion exchange water sprayed out from a cleaning nozzle 14. Thus, halogen compound processing can be executed uniformly even for large area. |
