发明名称 WIRING CONDITION PROCESSING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a wiring condition processing method that is capable of lessening power consumption and enhancing wiring channels in number. SOLUTION: A wiring condition processing section 120 obtains the delay on a virtual wiring length on the basis of arrangement information 220 on the substrate of a semiconductor device, and when the above delay exceeds a reference, information that indicate the duty factor of a wide wiring are obtained and added to path information for the formation of wiring condition information 230. A wiring processing section 130 forms wiring information 240 on the basis of the wiring condition information 230.
申请公布号 JP2000100956(A) 申请公布日期 2000.04.07
申请号 JP19980271370 申请日期 1998.09.25
申请人 HITACHI LTD 发明人 SUZUKI KATSUKI;SHIGEGAKI MASATO;MOTOYUKI KATSUAKI
分类号 H01L21/82;G06F17/50;(IPC1-7):H01L21/82 主分类号 H01L21/82
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