发明名称 |
WIRING CONDITION PROCESSING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To provide a wiring condition processing method that is capable of lessening power consumption and enhancing wiring channels in number. SOLUTION: A wiring condition processing section 120 obtains the delay on a virtual wiring length on the basis of arrangement information 220 on the substrate of a semiconductor device, and when the above delay exceeds a reference, information that indicate the duty factor of a wide wiring are obtained and added to path information for the formation of wiring condition information 230. A wiring processing section 130 forms wiring information 240 on the basis of the wiring condition information 230.
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申请公布号 |
JP2000100956(A) |
申请公布日期 |
2000.04.07 |
申请号 |
JP19980271370 |
申请日期 |
1998.09.25 |
申请人 |
HITACHI LTD |
发明人 |
SUZUKI KATSUKI;SHIGEGAKI MASATO;MOTOYUKI KATSUAKI |
分类号 |
H01L21/82;G06F17/50;(IPC1-7):H01L21/82 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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