| 摘要 |
PROBLEM TO BE SOLVED: To improve the charge transfer efficiency of a solid-state image sens ing device having horizontal overflow drains. SOLUTION: The solid-state image sensing device comprises second potential barriers 18 formed with specified spacings mutually in the interiors of potential barriers 15 below first horizontal charge transfer electrodes 19 adjacent charge barrier regions 14 constituting a horizontal charge transfer part. Owing to the second potential barriers 18 the potential on the potential barrier 15 can be blocked from being modulated with a potential applied to an unwanted charge drain part 16. In transferring a signal charge from aϕH1 electrode to aϕH2 (from (a) to (b) and (c)), hence, a part of the signal charge can be suppressed from leaking in the unwanted charge drain part 16.
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