| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device which can form a film by using a compound material whose vapor pressure is low. SOLUTION: MOCVD equipment 10 for forming BST films is provided with a swirl vaporizer 30. Wafers 1 are arranged in a treatment chamber 11 which is vacuum-exhausted. Liquid materials 51, 52, 53 are turned into fine particles, swung, liquidized and sprayed by using the swirl vaporizer 30, and the BST films are formed on the wafers 1. Ba (METHD)2, Sr (METHD)2 and Ti (MPD)(THD)2 which are dissolved in methanol are used as the liquid materials. Since the liquid materials can be turned into fine particles, swung and liquidized, and sprayed, the liquid materials in a sufficiently vaporized state can be supplied to the wafers. As a result, the BST films can be formed effectively. By forming the BST films with an MOCVD method, capacitors satisfactory in film quality can be formed with satisfactory productivity.
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