CIRCUIT FOR MONITORING REFERENCE CELL OF FLASH MEMORY

摘要

PURPOSE: A circuit is provided to obtain a precise reference voltage by controlling the reference voltage with a measurement of an electric current of a cell being a reference when reading memory data. CONSTITUTION: A circuit comprises: a threshold voltage control part(10) for programming a threshold voltage(Vt) by supplying a voltage to a drain of a reference cell(REF CELL); a reference voltage generation part(20) for generating a reference voltage by an amount of an electric current when a voltage is applied to the drain of the reference cell(REF CELL); a reference voltage measurement part(30) for measuring if a reference voltage produced from the reference voltage generation part(20); a reference cell(REF CELL) generating a reference voltage for reading data by the threshold voltage; and a cell current measurement part(100) capable of measuring a current flowing in the reference cell during applying a predetermined voltage to the reference cell in which a threshold voltage is programmed.