发明名称 METHOD FOR ESTIMATING STRESS MIGRATION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for estimating a stress migration of a semiconductor device is provided to estimate a stress migration within a short time. CONSTITUTION: A method for estimating a stress migration of a semiconductor device heats (10) the semiconductor device with the alloying temperature for a predetermined time, cools(20) the heated semiconductor device until a predetermined temperature lower than the alloying temperature, and ages(30) the cooled semiconductor device for a predetermined time. Thereby, the time needed to estimate a stress migration is reduced, a feedback of the estimation result becomes easy.
申请公布号 KR20000019182(A) 申请公布日期 2000.04.06
申请号 KR19980037156 申请日期 1998.09.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KWON, DONG CHEOL
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
代理机构 代理人
主权项
地址