发明名称 |
SEMICONDUCTOR DEVICE FOR PREVENTING STATIC ELECTRICITY |
摘要 |
PURPOSE: A semiconductor device for preventing static electricity is provided to increase capacitance of reverse voltage and protect an internal circuit of a semiconductor chip in spite of high electrostatic voltage. CONSTITUTION: A semiconductor device for preventing static electricity comprises a source /drain region which is coupled to an input/output terminal and is used for an open drain, and a resistance region which is monolithically coupled to the source/drain region to protect static electricity of the source/drain region. The resistance region is formed with a conductive type and doping concentration same as the source/drain region.
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申请公布号 |
KR20000018341(A) |
申请公布日期 |
2000.04.06 |
申请号 |
KR19980035893 |
申请日期 |
1998.09.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, HWANG YUN |
分类号 |
H01L23/60;(IPC1-7):H01L23/60 |
主分类号 |
H01L23/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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