发明名称 SEMICONDUCTOR DEVICE FOR PREVENTING STATIC ELECTRICITY
摘要 PURPOSE: A semiconductor device for preventing static electricity is provided to increase capacitance of reverse voltage and protect an internal circuit of a semiconductor chip in spite of high electrostatic voltage. CONSTITUTION: A semiconductor device for preventing static electricity comprises a source /drain region which is coupled to an input/output terminal and is used for an open drain, and a resistance region which is monolithically coupled to the source/drain region to protect static electricity of the source/drain region. The resistance region is formed with a conductive type and doping concentration same as the source/drain region.
申请公布号 KR20000018341(A) 申请公布日期 2000.04.06
申请号 KR19980035893 申请日期 1998.09.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, HWANG YUN
分类号 H01L23/60;(IPC1-7):H01L23/60 主分类号 H01L23/60
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