| 摘要 |
An (light emitting diode) LED production process, comprising provision of a protective film prior to inscribing trenches and etching a layer stack using a bromine-based etchant, is new. An LED production process comprises: (a) producing a light emission layer, a second conductivity type interlayer and a second conductivity type current diffusion layer on a first conductivity type GaAs substrate, all the layers consisting of AlxGayIn1-x-yP (x = 0 to 1, y = 0 to 1); (b) producing first and second conductivity type electrodes in contact with the substrate and the current diffusion layer respectively; (c) producing a protective film on the exposed surfaces of the current diffusion layer and the second conductivity type electrode; (d) inscribing trenches to expose the second conductivity type electrode and to reach the substrate; (e) etching the layers by /-4 mu m using a bromine-based etchant starting from positions facing the trenches in a direction parallel to the substrate surface such that an end section of each adjacent second conductivity type electrode is not reached; and (f) removing the protective film.
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