| 摘要 |
PURPOSE: A circuit of the flash memory device is provided to have the goal level without cutting the fuse when the reference voltage is different from the goal level and to enable the pass/fail test of the device is possible by using the circuit. CONSTITUTION: In the circuit, a channel is formed between a reference voltage outputting terminal(3) and the ground(2) and the PMOS transistor(MP11) in which a gate is connected to the first node(N1) is included. The circuit also comprises resistances(R11M, R12, R13, R14) which are in a serial connection between a power terminal(1) and the first node(N1), NMOS transistors(MN11, MN12, MN13) in which channels are in serial connection between the first node(N1) and the ground(2), and a blocking circuit which blocks the electric current passing the resistances and the NMOS transistors. The blocking circuit is connected to the both sides of the resistances(R13, R14).
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