MANUFACTURING METHOD OF CAPACITOR IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of a capacitor is provided to prevent a resistance between a storage electrode and a plug from increasing by controlling an oxidation of a barrier layer. CONSTITUTION: A manufacturing method of a capacitor comprises the steps of: forming on a semiconductor substrate of a first conductivity in which a transistor including an impurity region of a second conductivity is formed, an insulation layer having a contact hole exposing the impurity region; sequentially evaporating a contact layer in contact with the plug on the insulation layer, a first barrier layer and a storage electrode, and patterning for exposing the insulation layer so that only a portion corresponding to the plug is remained; forming a second barrier layer on the patterned side walls of the contact layer; and forming a dielectric layer and an upper electrode on the lower electrode and the second barrier layer.