发明名称 OVERLAY METROLOGY KEY DEVICE OF SEMICONDUCTOR LITHOGRAPHY PROCESS AND METHOD FOR MEASURING THE SAME
摘要 PURPOSE: An overlay metrology key device is provided to achieve an accurate overlay alignment in a lithography process. CONSTITUTION: An overlay metrology key device includes a main scale(400) formed in a first element layer on a semiconductor substrate, and a sub scale(410) formed on a second element layer of a semiconductor substrate. Each cornet of the sub scale is connected as a bridge type format on each side of a bulk pattern formed on the second element layer. Thereby, the overlay metrology key device measures a degree of alignment of the second element layer in a manufacturing process of the semiconductor IC.
申请公布号 KR20000018993(A) 申请公布日期 2000.04.06
申请号 KR19980036877 申请日期 1998.09.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, YOUNG CHANG
分类号 H01L21/027;G03F7/20;(IPC1-7):H01L21/027 主分类号 H01L21/027
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