发明名称 |
OVERLAY METROLOGY KEY DEVICE OF SEMICONDUCTOR LITHOGRAPHY PROCESS AND METHOD FOR MEASURING THE SAME |
摘要 |
PURPOSE: An overlay metrology key device is provided to achieve an accurate overlay alignment in a lithography process. CONSTITUTION: An overlay metrology key device includes a main scale(400) formed in a first element layer on a semiconductor substrate, and a sub scale(410) formed on a second element layer of a semiconductor substrate. Each cornet of the sub scale is connected as a bridge type format on each side of a bulk pattern formed on the second element layer. Thereby, the overlay metrology key device measures a degree of alignment of the second element layer in a manufacturing process of the semiconductor IC.
|
申请公布号 |
KR20000018993(A) |
申请公布日期 |
2000.04.06 |
申请号 |
KR19980036877 |
申请日期 |
1998.09.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, YOUNG CHANG |
分类号 |
H01L21/027;G03F7/20;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|