| 摘要 |
PROBLEM TO BE SOLVED: To execute projection exposure of fine desired patterns with high throughput on a wide surface to be exposed with the least possible labor while assuring sufficient exactness by using a photolithography technique. SOLUTION: The reticle 11 is composed by forming representative patterns 23a, 23b, 23c having exposure patterns corresponding to sectorial regions 22a, 22b, 22c in parallel. The exposure patterns are for first forming two-stage patterns as a first layer. At the time of exposure, respective concentric regions 21a to 21c are respectively exposed by successively using the representative patterns 23a, 23b, 23c while shifting a substrate 13 which is the surface to be exposed. |
