PAD OF SEMICONDUCTOR DEVICE HAVING MULTI-LAYERED METAL WIRING AND FABRICATION METHOD FOR THE SAME

摘要

PURPOSE: A pad of a semiconductor device can suppress the defect such as COUB(Chip Out Under Bond pad ) by improving the conductivity of a bond pad(214) and increasing the adhesion between multi-layered metal lines. CONSTITUTION: A bond pad can improve the adhesion and the conductivity of an upper most metal line layer(210) and a bottom metal line layer(206) by forming a trench(208) on the bottom metal line layer and forming the upper most metal line layer contacted directly with the bottom metal line layer. The bond pad comprises: the bottom metal line layer whose top is comprised by a first insulation film(202) and whose bottom is insulated by an interlayer insulation film(204) on a semiconductor substrate(200); the trench formed by etching at least more than one bottom metal line layer on the first insulation film; an intermediate metal line layer(218) covering the trench and the first insulation film; a trench plug(220) filling the trench on the intermediate metal line layer inside the trench; and the upper most metal line layer for increasing the adhesion covering the top of the trench plug and the intermediate metal line layer.