| 摘要 |
An apparatus for a vapor-phase epitaxial growth of a thin film on a substrate, which attains a decrease in the transition width, and at the same time, enables the thin film to be formed in a uniform thickness. This apparatus comprises a reaction vessel 18 of a flat shape, supply nozzles 15 for feeding a source gas 19 from a peripheral part of the reaction vessel 18, a susceptor 13 for holding a semiconductor single crystal substrate(s) 12 substantially horizontally, an infrared heating lamp 14, and a gas outlet 11 provided in a central part of an upper wall of the reaction vessel 18. Owing to this apparatus, the source gas 19 is gathered in a central part of the reaction vessel 18 without forming a vortex and then is discharged through the gas outlet 11. <IMAGE> |
