SEMICONDUCTOR MEMORY DEVICE HAVING HIGH MULTI-BIT DEGREE OF FREEDOM

摘要

PURPOSE: A semiconductor memory device is provided to have a high degree of freedom of column selection thereby enabling to proper to a tile oriented graphics display system. CONSTITUTION: A semiconductor memory device comprises: first memory array(21a)comprising numbers of memory cell groups inputting/outputting m first data at a multi-bit operating mode; and second memory array(21b) comprising numbers of memory cell groups inputting/outputting m second data at the multi-bit operating mode, wherein at the multi-bit operating mode, the rows of the numbers of the cell groups of the first memory array(21a) and the numbers of the memory cell groups of the second memory array(21b) are selected in the same row address and the columns of the numbers of the cell groups of the first memory array(21a) and the numbers of the memory cell groups of the second memory array(21b) are selected independently each other.