Pattern mask, for ion beam, electron beam, x-ray or scanning angular limited electron beam lithography, is produced using a subdivided silicon nitride film as mask for mask substrate structuring

摘要

Pattern mask production comprises using a subdivided structured silicon nitride film on a mask substrate as a mask for structuring the mask substrate. Preferred Features: The process may comprise: (a) forming a silicon oxide film and then a silicon nitride film over the entire back face of a mask substrate; (b) dividing the silicon nitride film to form two or more main silicon nitride film patterns; (c) structuring the main patterns into secondary patterns; (d) structuring the silicon oxide film using the secondary patterns as mask; and (e) structuring the mask substrate using the structured silicon oxide film as mask.