METHOD FOR REPRODUCING SEMICONDUCTOR WAFER

摘要

PURPOSE: A method for reproducing semiconductor wafer is provided to improve a productivity according to a manufacture of a semiconductor device by reproducing a wafer and reusing the wafer. CONSTITUTION: An oxidation film(12) and a titanium film(14) are successively formed on a wafer. The titanium film(14) is removed using an aqueous HF solution which an HF is attenuated to a deionized water about 15 percent to 25 percent degrees. The wafer(10) is a bare wafer on which a pattern is formed or a wafer on which the oxidation film is not formed. A nitration titanium film is removed using a mixed solution which mixes a HNO3 and a CH3COOH to the HF about 3 percent to 7 percent degrees and the wafer is reproduced.