AMORPHOUS SILICON THIN FILM CRYSTALLIZING METHOD AND POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR FABRICATING METHOD USING THE SAME

摘要

PURPOSE: A method of crystallizing an amorphous silicon thin film is provided to induce crystallization of amorphous silicon although a conductive layer is formed with a predetermined shape and accelerate silicon crystallization according to field effect toward one direction. CONSTITUTION: A method of crystallizing an amorphous silicon thin film comprises the steps of forming a substrate having a conductive layer, depositing an amorphous silicon thin film on the substrate, forming a metal thin film selectively covering the amorphous silicon thin film, and performing heat treatment and applying an electric field to the substrate having the metal thin film to crystallize the amorphous silicon thin film.