Ferroelectric memory device manufacture includes forming titanium and platinum layers on an insulation layer covered substrate and thermally treating under an oxygen atmosphere

摘要

Manufacture of the ferroelectric device comprises: (1) sequentially forming a titanium layer and a platinum layer on a semiconductor substrate (11) carrying an intermediate insulating layer (12); (2) thermally treating the substrate under oxygen to form a titanium oxide layer containing platinum (15a); (3) forming a second platinum lower electrode layer, a ferroelectric thin film and a third platinum upper electrode layer on the platinum-containing titanium oxide layer; (4) etching the upper platinum layer to form the upper electrode; and etching the ferroelectric film, the second platinum layer and the titanium oxide layer to form a capacitor (100). An Independent claim is included for a method of manufacturing a ferroelectric device which includes forming titanium and platinum layers followed by a two stage thermal treatment, firstly in a N2 atmosphere to form a platinum-titanium layer (PtxTiy) alloy layer and than in an oxygen atmosphere to prevent unreacted titanium from diffusing. A ferroelectric thin film pattern and a lower electrode are formed by etching the ferroelectric layer and the platinum-titanium alloy layer. A capping layer is formed over the substrate to expose the ferroelectric film pattern, on which an upper electrode is formed to form a capacitor.